8 f o 1 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 9 2 0 0 s d 9 0 r oct 18, 2011 t e e h s a t a d ne3520s03 n-channel gaas hj-fet, k band low noise and high - gain fea t ure s ? low noise figure a n d hi gh ass o ciated gain: nf = 0.65 db typ ., g a = 1 3 . 5 d b t y p. @ f = 2 0 g h z , v d s = 2 v, i d = 1 0 m a ? k ban d m i c ro-x p l astic ( s 0 3 ) pac k age applications ? 2 0 g hz b a n d d b s l n b ? o t h e r k b a n d c o m m u n i catio n s y s t e m ordering information pa rt number orde r numbe r pack a g e qua n tity ma rk ing supply i ng for m ne35 20s0 3 - t 1c ne35 20s0 3 - t 1c-a 2 kpcs/reel ne35 20s0 3 - t 1d ne35 20s0 3 - t 1d-a s 03 pack a g e (pb-f ree) 10 kpcs/reel j ? embosse d ta p e 8 mm w i de ? p i n 4 ( g ate ) f a ce t h e p erforation s i de o f t he tape rema r k t o order evalu a tion sam p les, pleas e contact y o ur n e arb y s a les o ffice. part number fo r sample ord e r: ne352 0s03-a absolute maxim u m ratings (t a = +25 c, unless otherw ise specified) para mete r symbol ratings unit drain to s o urc e voltag e v d s 4 .0 v gate to source voltage v g s ?3.0 v i t n e r r u c n i a r d d i d s s ma i t n e r r u c e t a g g 100 a t o tal p o w e r d i ssipati o n note p t o t 165 m w chan n e l t e m per a t u r e t c h + 125 c storage t e mperature t s t g ?65 t o + 125 c note: mounte d on 1 . 08 c m 2 1 .0 mm ( t) glass epo xy pw b ca utio n observe p r e c aution s wh en handlin g be cause these d evi ce s are se nsitive to electrostati c disch arg e. r09 d s0 029e j01 00 rev.1.00 oct 18, 201 1 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ne3520s03 r09ds0029ej0100 rev.1.00 page 2 of 8 oct 18, 2011 recommended operating range (t a = +25 c, unless otherwi se specified) parameter symbol min. typ. max. unit drain to source voltage v ds +1 +2 +3 v drain current i d 5 10 15 ma input power p in ? ? 0 dbm electrical characteristics (t a = +25 c, unless otherwise specified) parameter symbol test conditi ons min. typ. max. unit gate to source leak current i gso v gs = ?3.0 v ? 0.5 10 a saturated drain current i dss v ds = 2 v, v gs = 0 v 25 40 70 ma gate to source cut-off voltage v gs (off) v ds = 2 v, i d = 100 a ?0.2 ?0.7 ?1.3 v transconductance gm v ds = 2 v, i d = 10 ma 50 65 ? ms noise figure nf ? 0.65 0.90 db associated gain g a v ds = 2 v, i d = 10 ma, f = 20 ghz 11.5 13.5 ? db
ne3520s03 r09ds0029ej0100 rev.1.00 page 3 of 8 oct 18, 2011 typical characteristics (t a = +25 c, unless otherwise specified) total power dissipation p tot (mw) ambient temperature t a ( c) vs. ambient temperature total power dissipation 250 200 150 100 50 0 50 100 150 200 250 drain current i d (ma) gate to source voltage v gs (v) drain current vs. gate to source voltage v ds = 2 v ?0.8 ?0.6 ?0.4 ?0.2 0 drain current i d (ma) minimum noise figure nf min (db) associated gain g a (db) associated gain vs. drain current minimum noise figure, f = 20 ghz v ds = 2 v 025 20 15 10 5 drain current i d (ma) drain to source voltage v ds (v) drain to source voltage drain current vs. 0.0 1.0 2.0 3.0 4.0 frequency f (ghz) minimum noise figure nf min (db) associated gain g a (db) associated gain vs. frequency minimum noise figure, nf min g a v ds = 2 v i d = 10 ma 20 18 19 11 12 13 14 15 17 16 10 10 15 20 25 mounted on glass epoxy pcb (1.08 cm 2 1.0 mm (t) ) 80 60 70 50 40 30 20 10 0 80 60 70 50 40 30 20 10 0 v gs = 0 v ? 0.3 v ? 0.1 v ? 0.4 v ? 0.5 v ? 0.2 v 1.2 1.0 1.1 0.6 0.7 0.8 0.9 0.3 0.4 0.5 0.2 16 14 15 7 8 9 10 11 13 12 6 1.5 1.3 1.4 0.9 1.0 1.1 1.2 0.6 0.7 0.8 0.5 g a nf min remark the graphs indicate nominal characteristics.
ne3520s03 r09ds0029ej0100 rev.1.00 page 4 of 8 oct 18, 2011 s-parameters s-parameters/noise-parameters are provided on our web site in a form (s2p) that enables direct import to a microwave circuit simulator without keyboard input. click here to download s-parameters. [rf and microwave] [device parameters] url http://www2.renesa s.com/microwave/
ne3520s03 r09ds0029ej0100 rev.1.00 page 5 of 8 oct 18, 2011 rf measuring layout pattern (r eference only) (unit: mm) rt/duroid 5880/rogers t = 0.254 mm r = 2.20 tan delta = 0.0009 @10 ghz au-flash plate 13.0 2.80 s?s2.2mm 2.60 2.06 1.7 1.7 reference plane (calibration plane) reference plane (calibration plane) 6.0 0.64 0.74 2.2 0.54 0.3 th 1.60
ne3520s03 r09ds0029ej0100 rev.1.00 page 6 of 8 oct 18, 2011 package dimensions s03 (unit: mm) (top view) (side view) (bottom view) 0.5 typ. 2.60.1 0.65 typ. 3.20.2 1 2 3 4 2.20.2 3.20.2 1.7 1.5 max. 0.150.05 3 4 1 2 2.20.2 2.20.2 pin connections 1. source 2. drain 3. source 4. gate j
ne3520s03 r09ds0029ej0100 rev.1.00 page 7 of 8 oct 18, 2011 recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ir260 partial heating peak temperature (terminal temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below hs350 caution do not use different soldering methods together (except for partial heating).
ne3520s03 r09ds0029ej0100 rev.1.00 page 8 of 8 oct 18, 2011 caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. ? follow related laws and ordinances when disposi ng of the product. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subjec t to special control) up until final disposal. ? do not burn, destroy, cut, crush, or chemically dissolve the product. ? do not lick the product or in any way allow it to enter the mouth.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ne3520s03 data sheet description rev. date page summary 1.00 oct 18, 2011 - first edition issued
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